Publications (Updated: April 27, 2013 )

2012 —

  • "Quantum behavior of graphene transistors near the scaling limit"
    Y. Q. Wu, V. Perebeinos, Y.-M. Lin, T. Low, F. Xia, Ph. Avouris, Nano Letters 12, 1417 (2012).
  • "Three-Terminal Graphene Negative Differential Devices"
    Y. Q. Wu, D. B. Farmer, W. Zhu, S.-J. Han, C. D. Dimitrakopoulos, A. A. Bol, P. Avouris, Y.-M. Lin, ACS Nano 6, 2610 (2012)

  • "State-of-the-art graphene high frequency electronics"
    Y. Q. Wu, K. Jenkins, A. Valdes-Garcia, D. Farmer, Y. Zhu, A. A. Bol, C. Dimitrakopoulos, W. Zhu, F. Xia, Y.-M. Lin, Nano Letters 12, 3062(2012)

  • "Epitaxial Graphene Nanoribbon Array Fabrication using BCP-Assisted Nanolithography"
    G. Liu, Y. Wu, Y.-M. Lin, D. Farmer, J. Ott, J. Bruley, A. Grill, P. Avouris, D. Pfeiffer, A. Balandin, C. Dimitrakopoulos, ACS Nano 6, 6786 (2012)

2011 —

  • "Charge trapping and scattering in epitaxial graphene"
    D. B. FArmer, V. Perebeinos, Y.-M. Lin, C. Dimitrakopoulos, and Ph. Avouris, Phys. Rev. B, 84 205417 (2011)

  • "Record High RF Performancefor Epitaxial Graphene Transistors" (Late News)
    Y. Q. Wu, D. B. Farmer, A. Valdes-Garcia, W. Zhu, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris, Y.-M. Lin, IEDM Technical Digest (2011).

  • "Electrical characterization of wafer-scale epitaxial graphene and its RF applications"
    Y.-M Lin, J. A. Keith, J. Ott, C.  Dimitrakopoulos, D. B. Farrmer, Y. Q.  Wu, A. Grill, P. Avouris, IEEE International Microwave Symposium Digest (MTT) (2011)

  • "Enhanced Performance in Epitaxial Graphene with Optimized Channel Morphology"
    Y.-M. Lin, D. B. Farmer, K. A. Jenkins, Y. Wu, J. L. Tedesco, R. L. Myers-Ward, C. R. Eddy, Jr., D. K. Gaskill, C. Dimitrakopoulos, and Ph. Avouris, IEEE Electron Device Letter 32, 1343 - 1345 (2011)
  • "Ultimate RF Performance Potential of Carbon Electronics"
    S. O. Koswatta, A. Valdes-Garcia, M. Steiner, Y.-M. Lin, and Ph. Avouris, IEEE Trans. Microwave Theory and Techniques 59, 2739 (2011).
  • "Wafer-scale Graphene Integrated Circuit" [Link]
    Y.-M. Lin, A. Valdes-Garcia, S.-J. Han, D. B. Farmer, I. Meric, Y. Sun, Y.-Q. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris,
    and K. A. Jenkins, Science 332, 1294-1297 (2011).
  • "High-frequency, scaled graphene transistors on diamond-like carbon"
    Y. Wu, Y.-M. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris, Nature 472, 74-78 (2011).
    Also featured in Nature News and Views .
  • "The origins and limits of metal–graphene junction resistance"
    F. Xia, V. Perebeinos, Y.-M. Lin, Y. Wu, and Ph. Avouris, Nature Nanotechnology 6, 179-184 (2011).

2010 —

  • "RF Performance of Short Channel Graphene Field-Effect Transistor" (Late News)
    Y.Q. Wu, Y.-M. Lin, K.A. Jenkins, J.A. Ott, C. Dimitrakopoulos, D.B. Farmer, F. Xia, A. Grill, D.A. Antoniadis, Ph. Avouris, IEDM Technical Digest (2010).
  • "High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors"
    K. Majumdar, K.V.R.M. Murali, N. Bhat, F. Xia, Y.-M. Lin, IEDM Technical Digest (2010).
  • "Graphene-Based Fast Electronics and Optoelectronics" (Invited)
    Ph. Avouris, Y.-M. Lin, F. Xia, D.B. Farmer, T. Mueller, C. Dimitrakopoulos, K. Jenkins, A. Grill, IEDM Technical Digest (2010).
  • "Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering"
    H.-Y. Chiu, V. Perebeinos, Y.-M. Lin, and Ph. Avouris, Nano. Letters 10, 4634-4639 (2010).
  • "Multi-carrier transport in epitaxial multi-layer graphene"
    Y.-M. Lin
    , C. Dimitrakopoulos, D. B. Farmer, S. J. Han, Y. Wu, W. Zhu, D. K. Gaskill, J. L. Tedesco, R. L. Myers-Ward, C. R. Eddy, Jr., A. Grill, and Ph. Avouris, Appl. Phys. Lett. 97, 112107 (2010).
  • "Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors"
    C. Dimitrakopoulos, Y.-M. Lin, A. Grill, D. B. Farmer, M. Freitag, Y. Sun, S. J. Han, Z. Chen, K. A. Jenkins, Y. Zhu, Z. Liu, T. J. McArdle, J. A. Ott, R. Wisnieff, and Ph. Avouris, J. Vac. Sci. Technol.
    28, 985 (2010)
  • "Graphene Field-Effect Transistors with Self-Aligned Gates"
    D. Farmer, Y.-M. Lin, and Ph. Avouris, Appl. Phys. Lett. 97, 013103 (2010)
  • "Graphene RF Transistor Performance"
    K. A. Jenkins, Y.-M. Lin, D. Farmer, C. Dimitrakopoulos, H.-Y. Chiu, Alberto Valdes- Garcia, Ph. Avouris, and A. Grill, ECS Transactions 28, 3-13 (2010)
  • "External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon”
    K. Majumdar, K. V. R. M. Murali, Navakanta Bhat, Y.-M. Lin, Nano Letters 10, 2857-2862 (2010).
    Also highlighted in NPG Asia Materials. [LINK]
  • "100 GHz Graphene Transistor from Wafer-Scale Epitaxial Graphene"
    Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, Ph. Avouris, Science 327, 662 (2010).
  • "Dual Gate Graphene FETs with fT of 50 GHz"
    Y.-M. Lin, H.-Y. Chiu, K. A. Jenkins, D. B. Farmer, Ph. Avouris, A. Valdes-Garcia, EEE Electron Device Letters 31, 68 (2010).
  • "Graphene Field-Effect-Transistors with High On/Off Current Ratio"
    F. Xia, D. B. Farmer, Y.-M. Lin, and Ph. Avouris, Nano Letters 10, 715-718 (2010).
  • "Intrinsic limits of subthreshold slope in biased bilayer graphene"
    K. Majumdar, K. V. R. M. Murali, N. Bhat, and Y.-M. Lin, Appl. Phys. Lett. 96, 123504 (2010).

2009 —

  • "Utilization of Buffered Dielectrics to Achieve High Field-Effect Carrier Mobility in Graphene Transistors”
    D, B Farmer, H.-Y. Chiu, Y.-M. Lin, K. A. Jenkins, F. Xia, and Ph. Avouris, Nano Letters 9, 4474 (2009).
  • "Development of Graphene FETs for High Frequency Electronics" (Invited)
    Y.-M. Lin, K. A. Jenkins, D. B. Farmer, A. Valdes-Garcia, Ph. Avouris, C.-Y. Sung, H.-Y. Chiu, and B. Ek, IEDM Technical Digest (2009).
  • "Ultrafast graphene photodetector"
    F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia and Ph. Avouris, Nature Nanotechnology 4, 839 (2009).
  • "Behavior of a chemically doped graphene junction"
    D. B. Farmer, Y.-M. Lin, A. Afzali-Ardakani and Ph. Avouris, Appl. Phys. Lett. 94,  213106 (2009).
  • "Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor"
    F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos and Ph. Avouris, Nano Letters 9, 1039-1044 (2009).
  • "Operation of Graphene Transistors at Gigahertz Frequencies"
    Y.-M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer and Ph. Avouris, Nano Letters 9, 422-426 (2009).
  • "Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices"
    D. B. Farmer, R. Golizadeh-Mojarad, V. Perebeinos, Y.-M. Lin, G. S. Tulevski, J. C. Tsang, and Ph. Avouris, Nano Letters 9, 388-392 (2009).

2008 —

  • "Electrical Observation of Subband Formation  in Graphene Nanoribbons"
    Y.-M. Lin, V. Perebeinos, Z. Chen and Ph. Avouris, Phys. Rev. B. Rapid 78, 161409R (2008).
  • "Carbon Nanotubes and Optical Confinement – Controlling Light Emission in Nanophotonic Devices"
    M. Steiner, F. Xia, H. Qian, Y.-M. Lin, A. Hartschuh, A. J. Meixnerc, Ph. Avouris, Carbon Nanotubes and Associated Devices Conference 7037 - Proceedings of SPIE Volume 7037, 7037-7040 (2008).
  • "A microcavity-controlled, current-driven, on-chip nanotube emitter at infrared wavelengths"
    F. Xia, M. Steiner, Y.-M. Lin and Ph. Avouris, Nature Nanotechnology 3, 609-613 (2008).
  • "Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices"
    Y.-M. Lin
    and Ph. Avouris, Nano Letters, Vol. 8, pp. 2119-2125 (2008).(Cover Issue)
  • "Chemical Doping of Graphene nanoribbon Field-Effect Devices"
    Y.-M. Lin, D. B. Farmer, G. S. Tulevski, S. Xu, R. G. Gordon and Ph. Avouris, 66th Device Research Conference Digest pp.27-29 (2008).
  • "Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotuibes"
    M. I. Engel, J. P. Small, M. Steiner, Y.-M. Lin, A. A. Green, M. C. Hersam and Ph. Avouris, 66th Device Research Conference Digest (2008).

2007 —

  • "Impact of Oxide Substrate on Electrical and Optical Properties of Carbon Nanotube Devices"
    Y.-M. Lin
    , J. C. Tsang, M. Freitag, and Ph. Avouris, Nanotechnology, 18 295202 (2007).
  • "Graphene nano-ribbon electronics"
    Z
    . Chen, Y.-M. Lin, M. J. Rooks, and Ph. Avouris, Physica E, 40, 228 (2007).
  • "Electrical transport and 1/f noise in semiconducting carbon nanotubes"
    Y.-M. Lin
    , J. Appenzeller, Z. Chen, and Ph. Avouris, Physica E 37, 72-77 (2007).
  • "Oxide-Induced Noise in Carbon Nanotube Devices"
    Y.-M. Lin
    and Ph. Avouris, 65th Device Research Conference Digest, p. 139 (2007).
  • "Advances in Carbon Nanotube Devices and Circuits"
    Y.-M. Lin, Z. Chen, J. Appenzeller, P. M. Soloman, and Ph. Avouris, 2007 International Conference of Solid State Devices and Materials, 1164 (2007)
  • "1/f Noise in Carbon Nanotube Devices- On the Impact of Contacts and Device Geometry"
    J. Appenzeller, Y.-M. Lin, J. Knoch, Z. Chen, and Ph. Avouris, IEEE Trans. Nanotechnology 6, pp. 368—373 (2007).

2006 —

  • "Structure Design and Process Control for Cu Bonded Interconnects in 3D Integrated Circuits"
    K. N. Chen, S. H. Lee, P. S. Andry, C. K. Tsang, A. W. Topol, Y.-M. Lin, J.-Q. Lu, A. M. Young, M. Ieong, and W. Haensch, IEDM Technical Digest (2006).
  • "High Performance Carbon Nanotube Ring Oscillator"
    Z. Chen, J. Appenzeller, P. M. Soloman, Y.-M. Lin, and Ph. Avouris, 64th Device Research Conference Digest, p. 171 (2006).
  • "Reduction of 1/f Noise in Carbon Nanotube Devices"
    Y.-M. Lin
    , J. Appenzeller , C. C. Tsuei, Z. Chen , and Ph. Avouris, 64th Device Research Conference Digest, p. 279 (2006).
  • "An Integrated Logic Circuit Assembled on a Single Carbon Nanotube"
    Z. Chen, J. Appenzeller, Y.-M. Lin, J. Sippel-Oakley, A. G. Rinzler, J. Tang, S. J. Wind, P. M. Solomon, Ph. Avouris, Science 311, p. 1735 (2006).
  • "Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes"
    Y.-M. Lin
    , J. Appenzeller, J. Knoch, Z. Chen, and Ph. Avouris, Nano. Lett. 6, pp. 930-936 (2006).

2005 —

  • "Comparing Carbon Nanotube Transistors – The Ideal Choice: A Novel Tunneling Device Design"
    J. Appenzeller, Y.-M. Lin, J. Knoch, Z. Chen, and Ph. Avouris, IEEE Trans. Electron. Devices 52, pp. 2568–2576 (2005).
  • "High Performance Dual-Gate Carbon Nanotube FETs with 40-nm Gate Length"
    Y.-M. Lin
    , J. Appenzeller, and Ph. Avouris, IEEE Electron Device Lett. 26, pp. 823-825 (2005).
  • "Demonstration of a High Performance 40–nm–Gate Carbon Nanotube Field-Effect Transistor"
    Y.-M. Lin
    , J. Appenzeller, Z. Chen, F. Li , H.-M. Cheng, and Ph. Avouris, 63nd Device Research Conference Digest, pp. 113–114 (2005).
  • "Impact of the Nanotube Diameter on the Performance of CNFETs"
    Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and Ph. Avouris, 63nd Device Research Conference Digest, pp. 237–238 (2005).
  • "The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistor"
    Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and Ph. Avouris, Nano Lett. 5,  pp. 1497-1502 (2005).
  • "High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities"
    Y.-M. Lin
    , J. Appenzeller, and Ph. Avouris, IEEE Trans. Nanotechnolgy 4, pp.  481-489 (2005).

2004 —

  • "Novel Carbon Nanotube FET Design with Tunable Polarities"
    Y.-M. Lin
    , J. Appenzeller, and Ph. Avouris, IEDM Technical Digest pp.687-690 (2004).
  • "Carbon Nanotube Electronics and Optoelectronics"
    Ph. Avouris, A. Afzali, J. Appenzeller, J Chen, M. Freitag, C. Klinke, Y.-M. Lin, and J. C. Tsang, IEDM Technical Digest pp. 525-529 (2004).
  • "Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors"
    J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris, Phys. Rev. Lett. 93, 196805 (2004).
  • "Novel Structures Enabling Bulk Switching in Carbon Nanotube FETs"
    Y.-M. Lin
    , J. Appenzeller, and Ph. Avouris, 62nd Device Research Conference Digest, pp. 133-134 (2004).
  • "An extended model for carbon nanotube field-effect transistors"
    J. Knoch, S. Mantl, Y.-M. Lin, Z. Chen, Ph. Avouris, and J. Appenzeller, 62nd Device Research Conference Digest, pp. 135-136 (2004).
  • "Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering"
    Y.-M. Lin
    , J. Appenzeller, and Ph. Avouris, Nano Lett. 4, pp. 947-950 (2004).
  • "Nanowires"
    M. S. Dresselhaus, Y.-M. Lin, O. Rabin, M. R. Black and G. Dresselhaus, in Springer Handbook of Nanotechnology, edited by Bharat Bhushan, pp. 99-145 (2004).

2003 —

  • "Optical Absorption from an Indirect Transition in Bismuth Nanowires"
    M. R. Black, P. L. Hagelstein, S. B. Cronin, Y. M. Lin and M. S. Dresselhaus, Phys. Rev. B 68, 235417(1-10) (2003).
  • "Determination of Carrier Density in Te-doped Bi Nanowires"
    Y.-M. Lin
    and M. S. Dresselhaus, Appl. Phys. Lett. 83, 3567-3569 (2003).
    This article is selected for the November 3, 2003 issue of Virtual Journal of Nanoscale Science and Technology.
  • "Thermoelectric Properties of Superlattice Nanowires"
    Y.-M. Lin
    and M. S. Dresselhaus, Phys. Rev. B 68, 075304(1-14) (2003).
    This article is selected for the August 18, 2003 issue of Virtual Journal of Nanoscale Science and Technology.
  • "Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass"
    O. Rabin, P. R. Herz, Y.-M. Lin, A. I. Akinwande, S. B. Cronin and M. S. Dresselhaus, Adv. Func. Mater. 13, 631-638 (2003).
  • "Bismuth Nanowires for Thermoelectric Applications"
    M. S. Dresselhaus, Y.-M. Lin, O. Rabin and G. Dresselhaus, Micro. Thermo. Eng. 3, 207-219 (2003).
  • "Nanowires and Nanotubes"
    M. S. Dresselhaus, Y.-M. Lin, O. Rabin, A. Jorio, A. G. Souza Filho, M. A. Pimenta, R. Saito, Ge. G. Samsonidze  and G. Dresselhaus, Mater. Sci. Eng. C 23, 129-140 (2003).

2002 —

  • "Semimetal–semiconductor transition in Bi1-x Sbx alloy nanowires and their thermoelectric properties"
    Y.-M. Lin, O. Rabin, S. B. Cronin, J. Y. Ying and M. S. Dresselhaus, Appl. Phys. Lett. 81, 2403-2405 (2002).
  • "Making electrical contacts to nanowires with a thick oxide coating"
    S. B. Cronin, Y.-M. Lin, O. Rabin, M. R. Black, J. Y. Ying, M. S. Dresselhaus, P. L. Gai, J.-P. Minet and J.-P. Issi, Nanotechnology Journal 13, 653-658 (2002).
  • "Bismuth nanowires for potential applications in nanoscale electronics technology"
    S. B. Cronin, Y. M. Lin, O. Rabin, M. R. Black, G. Dresselhaus, M. S. Dresselhaus and P. L. Gai, Microscopy and Microanalysis 8, 58-63 (2002).
  • "Infrared absorption in Bismuth Nanowires resulting from quantum confinement"
    M. R. Black, Y.-M. Lin  and S. B. Cronin, O. Rabin and M. S. Dresselhaus, Phys. Rev. B 65, 195417 (2002).

2001 –

  • "Fabrication, structure and transport properties of nanowires"
    Y.-M. Lin, M. S. Dresselhaus and J. Y. Ying, in Advances in Chemical Engineering, Vol. 27, Academic Press, pp. 167-203 (2001).
  • "Transport properties of Bi1-xSbx alloy nanowires synthesized by pressure injection"
    Y.-M. Lin, S. B. Cronin, O. Rabin, J. Y. Ying and M. S. Dresselhaus, Appl. Phys. Lett. 79, 677-679 (2001).
  • "Plasmon excitation modes in nanowire arrays"
    M. S. Sander, R. Gronsky, Y.-M. Lin and M. S. Dresselhaus, J. Appl. Phys. 89, 2733-2736 (2001).
  • "Anomalously high thermoelectric figure of merit in Bi1-xSbx  nanowires by carrier pocket alignment"
    O. Rabin, Y.-M. Lin and M. S. Dresselhaus, Appl. Phys. Lett. 79, 81-83 (2001).
  • "Transport properties of antimony nanowires"
    J. Heremans, C. M. Thrush, Y.-M. Lin, S. B. Cronin and M. S. Dresselhaus, Phys. Rev. B 63, 085406 (2001).

1998 – 2000

  • "Theoretical Investigation of thermoelectric transport properties of cylindrical Bi nanowires"
    Y. -M. Lin, X. Sun and M. S. Dresselhaus, Phys. Rev. B 62, 4610-4623 (2000).
  • "Inter-subband Transitions in Bismuth Nanowires"
    M. R. Black, M. Padi, S. B. Cronin, Y.-M. Lin, O. Rabin, T. McClure, G. Dresselhaus, P. L. Hagelstein and M. S. Dresselhaus, Appl. Phys. Lett. 77, 4142-4144 (2000).
  • "Transport Properties of Bi Nanowire Arrays"
    Y.-M. Lin
    , S. B. Cronin, J. Y. Ying, M. S. Dresselhaus and J. P. Heremans, Appl. Phys. Lett. 76, 3944-3946 (2000).
  • "Bismuth nanowire arrays: synthesis and galvanomagnetic properties"
    J. Heremans, C. M. Thrush, Y.-M. Lin, S. Cronin, Z. Zhang, M. S. Dresselhaus and J. F. Mansfield, Phys. Rev. B 61, 2921-2930 (2000).